XP04116(2009) View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
XP04116 Datasheet PDF : 4 Pages
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This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
XP04116
Silicon PNP epitaxial planar type
For digital circuits
■ Features
■ Package
• Two elements incorporated into one package
• Code
(Transistors with built-in resistor)
SMini6-G1
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• UNR2116 × 2
• Pin Name
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
/ ■ Absolute Maximum Ratings Ta = 25°C
■ Marking Symbol: 6U
e Parameter
Symbol Rating
Unit
c e. d Collector-base voltage (Emitter open) VCBO
−50
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
−50
V
a e cle con Collector current
IC
−100
mA
lifecy , dis Total power dissipation
PT
150
mW
n u duct typed Junction temperature
Tj
150
°C
te tin ur Pro tinued Storage temperature
Tstg −55 to +150 °C
■ Internal Connection
654
Tr1
Tr2
123
ain onincludestyfpoell,opwlianngefdodiscon ■ Electrical Characteristics Ta = 25°C ± 3°C
c ued nce Parameter
Symbol
Conditions
Min Typ Max
M is ntin tena Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0
−50
/Disco main Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0
−50
ce pe, Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0
D tenan ce ty Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0
ain nan Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0
M ainte Forward current transfer ratio
hFE VCE = −10 V, IC = −5 mA
160
d m Collector-emitter saturation voltage
VCE(sat) IC = −10 mA, IB = − 0.3 mA
(plane Output voltage high-level
VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ −4.9
− 0.1
− 0.5
− 0.01
460
− 0.25
type)
Unit
V
V
µA
µA
mA
V
V
Output voltage low-level
VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ
− 0.2 V
Input resistance
R1
−30% 4.7 +30% kΩ
Transition frequency
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz
80
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2009
SJJ00166CED
1
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