ZVN3310F View Datasheet(PDF) - Diodes Incorporated.
Part Name
Description
Manufacturer
ZVN3310F Datasheet PDF : 5 Pages
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A Product Line of
Diodes Incorporated
ZVN3310F
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Symbol
VDSS
VGSS
ID
IDM
Value
100
±20
100
2
Units
V
V
mA
A
Thermal Characteristics
Characteristic
Power Dissipation @TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
TJ, TSTG
Value
330
-55 to +150
Unit
mW
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol Min
Typ
Max
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
100
⎯
⎯
Zero Gate Voltage Drain Current
TJ = 25°C
TJ = 125°C (Note 4)
IDSS
⎯
⎯
1
50
Gate-Source Leakage
IGSS
⎯
⎯
20
Gate Threshold Voltage
ON CHARACTERISTICS (Note 3)
VGS(th)
0.8
⎯
2.4
On-State Drain Current
ID (ON)
500
⎯
⎯
Static Drain-Source On-Resistance
DYNAMIC CHARACTERISTICS (Note 4)
RDS (ON)
⎯
⎯
10
Forward Transconductance (Note 3)
gfs
100
⎯
⎯
Input Capacitance
Ciss
⎯
⎯
40
Output Capacitance
Coss
⎯
⎯
15
Reverse Transfer Capacitance
Crss
⎯
⎯
5
Turn-On Delay Time (Note 5)
tD(on)
⎯
3
5
Turn-On Rise Time (Note 5)
tr
⎯
5
7
Turn-Off Delay Time (Note 5)
tD(off)
⎯
4
6
Turn-Off Fall Time (Note 5)
tf
⎯
5
7
Notes:
3. Measured under pulsed conditions. Width = 300μs. Duty cycle ≤2%
4. Sample test.
5. Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator.
Unit
V
μA
nA
V
mA
Ω
mS
pF
ns
Test Condition
ID = 1mA, VGS = 0V
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = 1mA
VDS = 25V, VGS = 10V
VGS = 10V, ID = 500mA
VDS = 25V, ID = 500mA
VDS = 25V, VGS = 0V
f = 1.0MHz
VDD ≈ 25V, ID = 500mA
ZVN3310F
Document Number DS31980 Rev. 4 - 2
2 of 5
www.diodes.com
October 2009
© Diodes Incorporated
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