ZXMN6A11GTA(2010) View Datasheet(PDF) - Diodes Incorporated.
Part Name
Description
Manufacturer
ZXMN6A11GTA Datasheet PDF : 8 Pages
| |||
A Product Line of
Diodes Incorporated
ZXMN6A11G
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current
VGS = 10V
Pulsed Drain Current
VGS = 10V
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
(Note 3)
TA = 70°C (Note 3)
(Note 2)
(Note 4)
(Note 3)
(Note 4)
Symbol
VDSS
VGS
ID
IDM
IS
ISM
Value
60
±20
4.4
3.5
3.1
15.6
5
15.6
Units
V
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Power Dissipation
Linear Derating Factor
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 2)
(Note 3)
(Note 2)
(Note 3)
(Note 5)
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
2.0
16
3.9
31
62.5
32.0
9.8
-55 to +150
Unit
W
mW/°C
°C/W
°C
Notes:
2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t ≤ 10 sec.
4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300μs.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
2 of 8
www.diodes.com
October 2010
© Diodes Incorporated
Share Link: 