2SA1890 View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SA1890 Datasheet PDF : 3 Pages
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Transistors
2SA1890
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SC5026
4.5±0.1
1.6±0.2
Unit: mm
1.5±0.1
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• High collector-emitter voltage (Base open) VCEO
• Mini power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−80
V
Collector-emitter voltage (Base open) VCEO
−80
V
Emitter-base voltage (Collector open) VEBO
−5
V
Collector current
IC
−1
A
Peak collector current
ICP
−1.5
A
Collector power dissipation *
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
1
0.4±0.08
1.5±0.1
23
0.5±0.08
3˚
3.0±0.15
0.4±0.04
45˚
1 : Base
2 : Collector
3 : Emitter
MiniP3-F1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0
−80
Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0
−80
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0
−5
Collector-base cutoff current (Emitter open) ICBO VCB = −40 V, IE = 0
− 0.1
Forward current transfer ratio
hFE1 *2 VCE = −2 V, IC = −100 mA
120
340
hFE2 *1 VCE = −2 V, IC = −500 mA
60
Collector-emitter saturation voltage
VCE(sat) IC = −500 mA, IB = −50 mA
− 0.2 − 0.3
Base-emitter saturation voltage *1
VBE(sat) IC = −500 mA, IB = −50 mA
− 0.85 −1.2
Transition frequency
fT
VCB = −10 V, IE = 50 mA, f = 200 MHz
120
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −10 V, IE = 0, f = 1 MHz
15 30
Unit
V
V
V
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
R
S
hFE1
120 to 240 170 to 340
Publication date: November 2002
SJC00036CED
1
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