2SD1767T100R(Rev_A) View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
Manufacturer
2SD1767T100R Datasheet PDF : 3 Pages
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Transistors
2SD1767 / 2SD1859
zElectrical characteristics curves
1.0 Ta=25°C 10mA
9mA
0.8 8mA
0.6
0.4
0.2
76mmAA
5mA
4mA
3mA
2mA
1mA
0
IB=0A
0
2
4
6
8
10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
50
Ta=25°C
VCE=6V
20
10
5
2
1
0.5
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
1000
500
Ta=25°C
200
100
VCE=5V
3V
1V
50
1 2 5 10 20 50 100 200 500 5000
COLLECTOR CURRENT : IC (mA)
Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagetion characteristics Fig.3 DC current gain vs. collector current
Ta=25°C
0.2
0.1
IC/IB=20
0.05
10
0.02
0.01
2
5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current
1000
Ta=25°C
VCE=5V
500
200
100
50
20
10
−1 −2
−5 −10 −20
−50 −100
EMITTER CURRENT : IE (mA)
Fig.5 Resistance raito vs. emitter current
Ta=25°C
f=1MHz
IC=0A
100
50
20
10
5
0.5 1 2
5 10 20
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6 Collector output capacitance
vs. collector-base voltage
Ta=25°C
f=1MHz
IC=0A
100
50
20
10
5
0.5 1 2
5 10 20
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Emitter input capacitance
vs. emitter-base voltage
10
5
2 IC Max (Pulse)
1
500m
200m
DC
100m
50m
20m
10m Tc=25°C
5m ∗ Single
2m
nonrepetitive
pulse
1m
0.1 0.2 0.5 1 2 5
10 20
50 100 200 500 1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.8 Safe operating area (2SD1859)
2
1 IC Max Pulse
IC Max
0.5
0.2
P
P
W
=100mW s=1∗0ms
∗
DC
0.1
Tc=25°C
0.05 ∗ Single
nonrepetitive
pulse
0.02
12
5 10 20
50 100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operating area (2SD1767)
Rev.A
2/2
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