APT30DF100HJ(2009) View Datasheet(PDF) - Microsemi Corporation
Part Name
Description
Manufacturer
APT30DF100HJ Datasheet PDF : 4 Pages
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APT30DF100HJ
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
VF Diode Forward Voltage
IRM Maximum Reverse Leakage Current
CT Junction Capacitance
Test Conditions
Min Typ Max Unit
IF = 40A
IF = 80A
2.5 3
3.1
V
IF = 40A
Tj = 125°C
2
VR = 1000V
Tj = 25°C
Tj = 125°C
100 µA
500
VR = 200V
28
pF
Dynamic Characteristics
Symbol Characteristic
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
Test Conditions
Min Typ Max Unit
Tj = 25°C
250
ns
Tj = 125°C
315
IF = 40A
VR = 667V
di/dt = 200A/µs
Tj = 25°C
Tj = 125°C
415
1650
nC
Tj = 25°C
4
A
Tj = 125°C
9
IF = 40A
150
ns
VR = 667V Tj = 125°C
2660
nC
di/dt=1000A/µs
29
A
Thermal and package characteristics
Symbol Characteristic
RthJC
RthJA
VISOL
TJ,TSTG
TL
Torque
Junction to Case Thermal resistance
Junction to Ambient
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Wt Package Weight
Min Typ
2500
-55
29.2
Max Unit
1.2 °C/W
20
V
175
300
°C
1.5 N.m
g
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