BAS40SL View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
BAS40SL Datasheet PDF : 4 Pages
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BAS40SL
Schottky Barrier Diodes
Features
• Low Forward Voltage Drop
• Fast switching
• Very Small and Thin SMD package
• Profile height, 0.43mm max
• Footprint, 1.0 x 0.6mm
1
2
SOD-923F
Marking: AA
Connection Diagram
2
1
October 2010
Absolute Maximum Ratings * TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VRRM Maximum Repetitive Reverse Voltage
40
IF(AV) Average Rectified Forward Current
100
IFSM
Forward Surge Current
600
(8.3mS Single Half Sine-Wave)
PD
Power Dissipation
227
TJ, TSTG Operating Junction & Storage Temperature Range
-55 to +150
* These ratings are limiting values above which the serviceability of the diode may be impaired.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
Parameter
RθJA
Thermal Resistance, Junction to Ambient *
* Minimum land pad.
Value
550
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
VR
Breakdown Voltage
IR = 10μA
40
VF
Forward Voltage
IF = 1mA
IF = 40mA
IR
Reverse Leakage
VR = 30V
trr
Reverse Recovery Time IF = IR= 10mA, irr = 0.1IR
Cj
Junction Capacitance VR = 0, f = 1.0MHz
Max.
380
1000
0.2
8.0
5.0
© 2010 Fairchild Semiconductor Corporation
BAS40SL Rev. A2
1
Unit
V
mA
mA
mW
°C
Unit
°C/W
Unit
V
mV
mV
μA
nS
pF
www.fairchildsemi.com
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