2DB1188P(2011) View Datasheet(PDF) - Diodes Incorporated.
Part Name
Description
Manufacturer
2DB1188P Datasheet PDF : 6 Pages
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2DB1188P/Q/R
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
2DB1188P
DC Current Gain
2DB1188Q
2DB1188R
SMALL SIGNAL CHARACTERISTICS
Symbol Min
BVCBO
-40
BVCEO
-32
BVEBO
-5
ICBO
⎯
IEBO
⎯
VCE(sat)
⎯
82
hFE
120
180
Current Gain-Bandwidth Product
fT
⎯
Output Capacitance
Cobo
⎯
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Typ
⎯
⎯
⎯
⎯
⎯
-0.35
⎯
120
20
Max
⎯
⎯
⎯
-1
-1
-0.8
180
270
390
⎯
⎯
Unit
Test Condition
V IC = -50μA, IE = 0
V IC = -1mA, IB = 0
V IE = -50μA, IC = 0
μA VCB = -20V, IE = 0
μA VEB = - 4V, IC = 0
V IC = -2A, IB = -0.2A
⎯ VCE = -3V, IC = -0.5A
MHz
pF
VCE = -5V, IC = -0.1A,
f = 30MHz
VCB = -10V, f = 1MHz
1.4
350
1.2
IB = -10mA
300
VCE = -3V
TA = 150°C
1.0
IB = -8mA
250
TA = 85°C
0.8
IB = -6mA
200
TA = 25°C
0.6
150
IB = -4mA
0.4
100
IB = -2mA
TA = -55°C
0.2
50
0
0
1
2
3
4
5
-VCE, COLLECTOR EMITTER VOLTAGE (V)
Fig. 1 Typical Collector Current
vs. Collector-Emitter Voltage
0.6
0.5
IC/IB = 10
0
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 2 Typical DC Current Gain
vs. Collector Current (2DB1188Q)
1.2
VCE = -3V
1.0
0.4
0.8
TA = -55°C
0.3
0.6
TA = 150°C
TA = 25°C
0.2
0.4
TA = 85°C
TA = 85°C
TA = 25°C
0.1
TA = -55°C
0.2 TA = 150°C
0
0.0001 0.001 0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0
0.0001 0.001 0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 4 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
2DB1188P/Q/R
Document number: DS31144 Rev. 5 - 2
4 of 6
www.diodes.com
November 2011
© Diodes Incorporated
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