2SB1188T100P View Datasheet(PDF) - ROHM Semiconductor

Part Name

Description

Manufacturer

2SB1188T100P

Medium power transistor (−32V, −2A)

ROHM Semiconductor 

Transistors

2SB1188 / 2SB1182 / 2SB1240

Medium power transistor (−32V, −2A)

2SB1188 / 2SB1182 / 2SB1240

!Features

1) Low VCE(sat).

VCE(sat) = −0.5V (Typ.)

(IC/IB = −2A / −0.2A)

2) Complements the 2SD1766 /

2SD1758 / 2SD1862

!Structure

Epitaxial planar type

PNP silicon transistor

!External dimensions (Units : mm)

2SB1188

2SB1182

4.5

+0.2

−0.1

1.6±0.1

1.5

+0.2

−0.1

6.5±0.2

5.1+−00..21

C0.5

2.3+−00..21

0.5±0.1

(1) (2) (3)

0.4±0.1

1.5±0.1

0.5±0.1

3.0±0.2

0.4±0.1

1.5±0.1

0.4

+0.1

−0.05

ROHM : MPT3

EIAJ : SC-62

(1) Base

(2) Collector

(3) Emitter

Abbreviated symbol: BC∗

2SB1240

6.8±0.2

2.5±0.2

0.75

0.9

0.65±0.1

2.3±0.2 2.3±0.2

0.55±0.1

1.0±0.2

(1) (2) (3)

ROHM : CPT3

EIAJ : SC-63

(1) Base

(2) Collector

(3) Emitter

0.65Max.

0.5±0.1

(1) (2) (3)

2.54 2.54

1.05

0.45±0.1

ROHM : ATV

!Absolute maximum ratings (Ta=25°C)

∗ Denotes hFE

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

VCBO

VCEO

VEBO

IC

Limits

−40

−32

−5

−2

−3

0.5

2SB1188

Collector power

2

PC

dissipation

2SB1182

10

2SB1240

1

Junction temperature

Tj

150

Storage temperature

Tstg

−55~+150

∗1 Single pulse, PW=100ms

∗2 When mounted on a 40×40×0.7 mm ceramic board.

∗3 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.

(1) Emitter

(2) Collector

(3) Base

Unit

V

V

V

A(DC)

A(Pulse) ∗1

W

W ∗2

W(TC=25°C)

W ∗3

°C

°C

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