BAP65-02,115(2010) View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BAP65-02,115 Datasheet PDF : 9 Pages
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NXP Semiconductors
BAP65-02
Silicon PIN diode
10
rD
(Ω)
mld499
1000
Cd
(fF)
800
mld500
600
1
400
200
10−110−1
1
10
102
IF (mA)
Fig 1.
f = 100 MHz; Tj = 25 C
Forward resistance as a function of forward
current; typical values
0
s21 2
(dB)
−0.1
mld501
(5)
−0.2
(1) (2) (3) (4)
−0.3
−0.4
0
0
4
8
12
16
20
VR (V)
Fig 2.
f = 1 MHz; Tj = 25 C
Diode capacitance as a function of reverse
voltage; typical values
0
s21 2
(dB)
−10
mld502
−20
−30
−0.5
0
1000
2000
3000
f (MHz)
−40
0
1000
2000
3000
f (MHz)
(1) IF = 0.5 mA
(2) IF = 1 mA
(3) IF = 5 mA
(4) IF = 10 mA
(5) IF = 100 mA
Diode inserted in series with a 50 stripline circuit and
biased via the analyzer Tee network. Tamb = 25 C.
Fig 3. Insertion loss (s212) of the diode as a function
of frequency; typical values
Diode zero biased and inserted in series with a 50
stripline circuit. Tamb = 25 C.
Fig 4. Isolation (s212) of the diode as a function of
frequency; typical values
BAP65-02
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 28 September 2010
© NXP B.V. 2010. All rights reserved.
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