BUK7506-55B View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BUK7506-55B Datasheet PDF : 15 Pages
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NXP Semiconductors
BUK7506-55B
N-channel TrenchMOS standard level FET
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 11;
see Figure 12
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 75 A; Vsup ≤ 55 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
QGD
gate-drain charge VGS = 10 V; ID = 25 A;
VDS = 44 V; Tj = 25 °C;
see Figure 13
[1] Continuous current is limited by package.
2. Pinning information
Min Typ Max Unit
-
-
55 V
[1]
-
-
75 A
-
-
254 W
-
5.1 6
mΩ
-
-
680 mJ
-
19 -
nC
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
gate
D
drain
S
source
D
mounting base; connected to
drain
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78A (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
BUK7506-55B
TO-220AB
BUK7506-55B
Product data sheet
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78A
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 June 2010
© NXP B.V. 2010. All rights reserved.
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