BUK7506-55B View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BUK7506-55B Datasheet PDF : 15 Pages
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NXP Semiconductors
BUK7506-55B
N-channel TrenchMOS standard level FET
150
ID
(A)
100
03nl98
Capped at 75 A due to package
50
120
Pder
(%)
80
40
03na19
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
103
ID
(A)
102
10
Limit RDSon = VDS/ID
Capped at 75 A due to package
DC
03nl96
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
1
10−1
1
10
102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7506-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 June 2010
© NXP B.V. 2010. All rights reserved.
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