NTMS10P02R2G View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
NTMS10P02R2G
ON Semiconductor
NTMS10P02R2G Datasheet PDF : 9 Pages
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NTMS10P02R2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 4)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = −250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
−20
−
Zero Gate Voltage Drain Current
(VDS = −20 Vdc, VGS = 0 Vdc, TJ = 25°C)
(VDS = −20 Vdc, VGS = 0 Vdc, TJ = 70°C)
Gate−Body Leakage Current
(VGS = −12 Vdc, VDS = 0 Vdc)
Gate−Body Leakage Current
(VGS = +12 Vdc, VDS = 0 Vdc)
IDSS
−
−
IGSS
−
IGSS
−
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = −250 mAdc)
Temperature Coefficient (Negative)
VGS(th)
−0.6
−
Static Drain−to−Source On−State Resistance
(VGS = −4.5 Vdc, ID = −10 Adc)
(VGS = −2.5 Vdc, ID = −8.8 Adc)
Forward Transconductance (VDS = −10 Vdc, ID = −10 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = −16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Notes 5 & 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = −10 Vdc, ID = −1.0 Adc,
VGS = −4.5 Vdc,
RG = 6.0 W)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = −10 Vdc, ID = −10 Adc,
VGS = −4.5 Vdc,
RG = 6.0 W)
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
(VDS = −10 Vdc,
VGS = −4.5 Vdc,
ID = −10 Adc)
RDS(on)
−
−
gFS
−
Ciss
−
Coss
−
Crss
−
td(on)
−
tr
−
td(off)
−
tf
−
td(on)
−
tr
−
td(off)
−
tf
−
Qtot
−
Qgs
−
Qgd
−
BODY−DRAIN DIODE RATINGS (Note 5)
Diode Forward On−Voltage
(IS = −2.1 Adc, VGS = 0 Vdc)
VSD
−
(IS = −2.1 Adc, VGS = 0 Vdc, TJ = 125°C)
−
Diode Forward On−Voltage
(IS = −10 Adc, VGS = 0 Vdc)
VSD
−
(IS = −10 Adc, VGS = 0 Vdc, TJ = 125°C)
−
Reverse Recovery Time
(IS = −2.1 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
trr
−
ta
−
tb
−
Reverse Recovery Stored Charge
QRR
−
4. Handling precautions to protect against electrostatic discharge is mandatory.
5. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.
6. Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
−
−12.1
−
−
−
−
−
−
−1.0
−5.0
−100
100
Vdc
mV/°C
mAdc
nAdc
nAdc
−0.88
2.8
0.012
0.017
30
−1.20
−
0.014
0.020
−
Vdc
mV/°C
W
Mhos
3100
3640
pF
1100
1670
475
1010
25
35
ns
40
65
110
190
110
190
25
−
ns
100
−
100
−
125
−
48
70
nC
6.5
−
17
−
−0.72
−1.2
Vdc
−0.60
−
−0.90
−
Vdc
−0.75
−
65
100
ns
25
−
40
−
0.075
−
mC
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