MBD110DWT1 View Datasheet(PDF) - Motorola => Freescale
Part Name
Description
Manufacturer
MBD110DWT1 Datasheet PDF : 8 Pages
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MBD110DWT1 MBD330DWT1 MBD770DWT1
TYPICAL CHARACTERISTICS
MBD110DWT1
1.0
0.7
0.5
VR = 3.0 Vdc
0.2
0.1
0.07
0.05
0.02
MBD110DWT1
0.01
30 40 50 60 70 80 90 100 110 120 130
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Reverse Leakage
100
10
TA = 85°C
TA = – 40°C
1.0
0.1
0.3
TA = 25°C
MBD110DWT1
0.4
0.5
0.6
0.7
0.8
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
1.0
11
10
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
9
(Test Circuit Figure 5)
0.9
8
7
0.8
6
5
4
0.7
3
MBD110DWT1
2
MBD110DWT1
0.6
1
0
1.0
2.0
3.0
4.0
0.1 0.2
0.5
1.0
2.0
5.0
10
VR, REVERSE VOLTAGE (VOLTS)
PLO, LOCAL OSCILLATOR POWER (mW)
Figure 3. Capacitance
Figure 4. Noise Figure
LOCAL
OSCILLATOR
UHF
NOISE SOURCE
H.P. 349A
DIODE IN
TUNED
MOUNT
NOISE
FIGURE METER
H.P. 342A
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
Figure 5. Noise Figure Test Circuit
NOTES ON TESTING AND SPECIFICATIONS
Note 1 – CC and CT are measured using a capacitance
bridge (Boonton Electronics Model 75A or equiva-
lent).
Note 2 – Noise figure measured with diode under test in
tuned diode mount using UHF noise source and lo-
cal oscillator (LO) frequency of 1.0 GHz. The LO
power is adjusted for 1.0 mW. IF amplifier NF = 1.5
dB, f = 30 MHz, see Figure 5.
Note 3 – LS is measured on a package having a short instead
of a die, using an impedance bridge (Boonton Radio
Model 250A RX Meter).
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
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