2N5732 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2N5732 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5732
DESCRIPTION
·With TO-3 package
·High current capability
APPLICATIONS
·For linear amplifier and inductive
switching applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
·
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
ICM
Collector current-peak
PT
Total power dissipation
TC=25℃
Tj
Junction temperature
Tstg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
100
80
7
20
30
87.5
150
-65~200
UNIT
V
V
V
A
A
W
℃
℃
MAX
1.17
UNIT
℃/W
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