2N5732 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2N5732 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=10 A;IB=1 A
VCEsat-2 Collector-emitter saturation voltage IC=20 A;IB=4 A
VBE
Base-emitter on voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=10 A; VCE=4V
VCB=100V; IE=0
VEB=7V; IC=0
hFE-1
DC current gain
IC=5A ; VCE=2V
hFE-2
DC current gain
IC=20A ; VCE=4V
fT
Transition frequency
IC=1A ; VCE=10V
Product Specification
2N5732
MIN TYP. MAX UNIT
80
V
1.4
V
4.0
V
2.2
V
0.1 mA
0.1 mA
30
300
5
30
MHz
2
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