2N6517C View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
2N6517C Datasheet PDF : 6 Pages
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Electrical Characteristics (Continued) Ta = 25°C unless otherwise noted
Symbol
Parameter
Conditions
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
Cob
fT
VBE(on)
Output Capatitance
Current Gain Bandwidth Product *
Base-Emitter On Voltage
IC = 10mA, IB = 1mA
IC = 20mA, IB = 2mA
IC = 30mA, IB = 3mA
IC = 50mA, IB = 5mA
IC = 10mA, IB = 1mA
IC = 20mA, IB = 2mA
IC = 30mA, IB = 3mA
VCB = 20V, IE = 0, f = 1MHz
IC = 10mA, VCE = 20V, f = 20MHz
IC = 100mA, VCE = 10V
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
Min.
40
Max.
0.3
0.35
0.5
1
0.75
0.85
0.9
6
200
2
Units
V
V
V
V
V
V
V
pF
MHz
V
© 2010 Fairchild Semiconductor Corporation
2N6517 Rev. B1
2
www.fairchildsemi.com
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