2SA1111 View Datasheet(PDF) - SavantIC Semiconductor
Part Name
Description
Manufacturer
2SA1111 Datasheet PDF : 4 Pages
| |||
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1111 2SA1112
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SA1111
2SA1112
IC=-0.1mA ,IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-10µA ,IC=0
VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA
VBEsat
Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
IC=-0.5A; IB=-50mA
VCB=-120V; IE=0
VEB=-4V; IC=0
IC=-150mA ; VCE=-10V
IC=-500mA ; VCE=-5V
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT
Transition frequency
IC=50mA ; VCE=-10V
MIN TYP. MAX UNIT
-150
V
-180
-5
V
-0.5 -2.0
V
-1.0 -2.0
V
-1
µA
-1
µA
65
330
50
30
pF
200
MHz
hFE-1 Classifications
P
Q
R
S
65-110 90-155 130-220 185-330
2
Share Link: 