2SA1797L-X-AB3-B View Datasheet(PDF) - Unisonic Technologies

Part Name

Description

Manufacturer

2SA1797L-X-AB3-B

PNP SILICON TRANSISTOR

Unisonic Technologies 

2SA1797

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-50

V

Emitter-Base Voltage

VEBO

-6

V

Collector Current

DC

PULSE(Note 1)

IC

-2

A

-5

A

TO-92NL

1

W

SOT-223

Collector Power Dissipation

SOT-89

PC

0.8

W

0.5

W

TO-252

1.9

W

Junction Temperature

TJ

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: 1. Single pulse, PW=10ms

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

Collector-Emitter Saturation Voltage

DC Current Gain

Transition Frequency

Output Capacitance

Note: Measured using pulse current.

SYMBOL

BVCBO

BVCEO

BVEBO

ICBO

IEBO

VCE(SAT)

hFE

fT

Cob

TEST CONDITIONS

IC = -50μA

IC = -1mA

IE = -50μA

VCB = -50V

VEB = -5V

IC/IB = -1A/-50mA (Note)

VCE = -2V, IC=-0.5A (Note)

VCE = -2V, IE=0.5A, f=100MHz

VCB = -10V, IE=0A, f=1MHz

„ CLASSIFICATION OF hFE

RANK

RANGE

A

120-240

B

200-400

MIN TYP MAX UNIT

-50

V

-50

V

-6

V

-0.1 μA

-0.1 μA

-0.15 -0.35 V

120

400

200

MHz

36

pF

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R208-029,E

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