2SA1797G-X-T9N-T View Datasheet(PDF) - Unisonic Technologies

Part Name

Description

Manufacturer

2SA1797G-X-T9N-T

PNP SILICON TRANSISTOR

Unisonic Technologies 

2SA1797

„ TYPICAL CHARACTERISTICS

Grounded Emitter Output

2.0

Characteristics

1.8

1.6

1.4

1.2

1

800m

Ta=25℃

IB=10mA

9m8AmA7mA

6mA

5mA

4mA

600m

400m

200m

3mA

2mA

1mA

0

0 1 2 3 4 5 6 7 8 9 10

Collector to Emitter Voltage, VCE (V)

PNP SILICON TRANSISTOR

Grounded Emitter Propagation

-10

Characteristics

-5 VCE=2V

-2

-1

-0.5

-0.2

-0.1

-0.05

-0.02

-0.01

-5m

-2m

-1m

0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4

Base to Emitter Voltage, VBE (V)

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 4

QW-R208-029,E

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