2SA1905 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SA1905 Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1905
High-Current Switching Applications.
2SA1905
Unit: mm
• Low collector saturation voltage: VCE (sat) = −0.4 V (max)
• High speed switching time: tstg = 1.0 μs (typ.)
• Complementary to 2SC5076
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−60
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−5
A
Base current
IB
−1
A
Collector power dissipation
PC
1.3
W
Junction temperature
Storage temperature range
Tj
150
°C
Tstg
−55 to 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
TOSHIBA
―
2-8M1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.55 g (typ.)
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09
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