2SA1905 View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

2SA1905

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Toshiba 

2SA1905

Electrical Characteristics (Ta = 25°C)

Characteristics

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

Test Condition

ICBO

VCB = −50 V, IE = 0

IEBO

VEB = −5 V, IC = 0

V (BR) CEO IC = −10 mA, IB = 0

hFE (1)

VCE = −1 V, IC = −1 A

(Note)

hFE (2)

VCE (sat)

VBE (sat)

fT

Cob

VCE = −1 V, IC = −3 A

IC = −3 A, IB = −0.15 A

IC = −3 A, IB = −0.15 A

VCE = −4 V, IC = −1 A

VCB = −10 V, IE = 0, f = 1 MHz

Min Typ. Max Unit

―

―

−1

μA

―

―

−1

μA

−50 ―

―

V

70

―

240

30

―

―

― −0.2 −0.4

V

― −0.9 −1.2

V

―

60

― MHz

― 170 ―

pF

Turn-on time

ton

Output

―

0.1

―

20 μs Input IB2

Switching time Storage time

Fall time

tstg

IB1

VCC = −30 V

tf

−IB1 = IB2 = 0.15 A, duty cycle ≤ 1%

―

1.0

―

μs

―

0.1

―

Note: hFE (1) classification O: 70 to 140, Y: 120 to 240

Marking

A1905

Characteristics

indicator

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2

2006-11-09

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