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Part Name
Description
2SA1905 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SA1905
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
Toshiba
2SA1905 Datasheet PDF : 5 Pages
1
2
3
4
5
2SA1905
1000
100
r
th
– t
w
Curves should be applied in thermal limited area. (Single nonrepetitive pulse)
Ta = 25°C
10
1
0.1
0.001
0.01
0.1
1
10
Pulse width t
w
(s)
100
1000
Safe Operating Area
−
20
−
10 IC max (pulsed)*
−
5
IC max (continuous)
−
3
10 ms*
1 ms*
−
1
−
0.5
−
0.3
DC operation
Ta = 25°C
100 ms*
−
0.1
−
0.05 *: Single nonrepetitive pulse
−
0.03
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
−
0.01
−
0.1
−
0.3
−
1
−
3
VCEO max
−
10
−
30
Collector-emitter voltage V
CE
(V)
−
100
P
C
– Ta
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75 100 125 150 175
Ambient temperature Ta (°C)
4
2006-11-09
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