2SB1116L-L-T92-R(2011) View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
2SB1116L-L-T92-R Datasheet PDF : 4 Pages
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2SB1116/A
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25℃,unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
2SB1116
2SB1116A
VCBO
-60
V
-80
Collector to Emitter Voltage
2SB1116
2SB1116A
VCEO
-50
V
-60
Emitter to Base Voltage
VEBO
-6
V
Collector Current
DC
IC
Pulse(Note2)
ICM
-1
A
-2
A
Total Power Dissipation
PC
750
mW
Junction Temperature
Operating Temperature
Storage Temperature
TJ
TOPR
TSTG
+150
°C
-20 ~ +85
℃
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width≦10ms, Duty cycle≦50%
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Emitter Saturation Voltage(Note) VCE(SAT) IC=-1A, IB=-50mA
Base-Emitter Saturation Voltage(Note)
VBE(SAT) IC=-1A, IB=-50mA
Base Emitter On Voltage(Note)
VBE(ON) VCE=-2V, IC=-50mA
Collector Cut-Off Current
ICBO VCB=-60V, IE=0
Emitter Cut-Off Current
IEBO VEB=-6V, IC=0
DC Current Gain(Note)
hFE1
VCE=-2V,
IC=-100mA
2SB1116
2SB1116A
hFE2 VCE=-2V, IC=-1A
Transition Frequency
fT
VCE=-2V, IC=-100mA
Output Capacitance
COB VCB=-10V, IE=0, f=1MHz
Turn On Time
tON
VCC=-10V, IC=-100mA
IB1=-IB2=-10mA, VBE(OFF)=2 ~ 3V
Storage Time
tSTG
Fall Time
tF
Note: Pulse Test: Pulse width≦350μs, Duty cycle≦2%
MIN
-600
135
135
81
70
CLASSIFICATION OF hFE1
TYP
-0.2
-0.9
-650
120
25
0.07
0.7
0.07
MAX
-1.2
-700
-100
-100
600
400
UNIT
V
V
mV
nA
nA
MHz
pF
μs
μs
μs
RANK
hFE1
Y
135 ~ 270
G
200 ~ 400
L
300 ～ 600
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R201-066.C
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