2SB1101 View Datasheet(PDF) - Quanzhou Jinmei Electronic
Part Name
Description
Manufacturer
2SB1101 Datasheet PDF : 3 Pages
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JMnic
Silicon PNP Power Transistors
Product Specification
2SB1101
DESCRIPTION
·With TO-220 package
·Complement to type 2SD1601
·DARLINGTON
·High DC current gain
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
-60
-60
-7
-4
-8
40
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
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