2SB1185 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

Manufacturer

2SB1185

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1185

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=-50µA; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-50µA; IC=0

VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A

VBEsat

Base-emitter saturation voltage

IC=-2A ;IB=-0.2A

ICBO

Collector cut-off current

VCB=-40V; IE=0

IEBO

Emitter cut-off current

VEB=-4V; IC=0

hFE

DC current gain

IC=-500mA ; VCE=-3V

fT

Transition frequency

IC=-0.5A; VCE=-5V

COB

Collector output capacitance

IE=0;f=1MHz ; VCB=-10V

MIN TYP. MAX UNIT

-50

V

-60

V

-5

V

-1.0

V

-1.5

V

-1.0

µA

-1.0

µA

60

320

70

MHz

50

pF

hFE Classifications

D

E

F

60-120 100-200 160-320

2

Share Link: