2SB1412 View Datasheet(PDF) - ROHM Semiconductor

Part Name

Description

Manufacturer

2SB1412

Low frequency transistor (−20V,−5A)

ROHM Semiconductor 

Low frequency transistor (−20V,−5A)

2SB1412

zFeatures

1) Low VCE(sat).

VCE(sat) = −0.35V (Typ.)

(IC/IB = −4A / −0.1A)

2) Excellent DC current gain characteristics.

3) Complements the 2SD2118.

zStructure

Epitaxial planar type

PNP silicon transistor

zDimensions (Unit : mm)

2SB1412

ROHM : CPT3

EIAJ : SC-63

∗ Denotes hFE

(1) Base

(2) Collector

(3) Emitter

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

Collector-base voltage

VCBO

−30

Collector-emitter voltage

VCEO

−20

Emitter-base voltage

VEBO

−6

Collector current

−5

IC

−10

Collector power

1

dissipation

2SB1412

PC

10

Junction temperature

Tj

150

Storage temperature

Tstg

−55 to 150

∗1 Single pulse, Pw=10ms

Unit

V

V

V

A(DC)

A(Pulse) ∗1

W

W(Tc=25°C)

°C

°C

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Collector-base breakdown voltage BVCBO −30

Collector-emitter breakdown voltage BVCEO −20

Emitter-base breakdown voltage

BVEBO

−6

Collector cutoff current

ICBO

−

Emitter cutoff current

IEBO

−

Collector-emitter saturation voltage VCE(sat) −

DC current transfer ratio

Transition frequency

hFE

82

fT

−

Output capacitance

∗ Measured using pulse current.

Cob

−

Typ.

−

−

−

−

−

0.35

−

120

60

Max.

−

−

−

−0.5

−0.5

−1.0

390

−

−

Unit

V

V

V

µA

µA

V

−

MHz

pF

Conditions

IC= −50µA

IC= −1mA

IE= −50µA

VCB= −20V

VEB= −5V

IC/IB= −4A/ −0.1A

∗

VCE= −2V, IC= −0.5A

∗

VCE= −6V, IE=50mA, f=100MHz

VCB= −20V, IE=0A, f=1MHz

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○c 2009 ROHM Co., Ltd. All rights reserved.

2009.12 - Rev.C

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