2SB1502 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SB1502 Datasheet PDF : 2 Pages
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Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25"C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= -4A; !B= -4mA
VeE(sat) Base-Emitter Saturation Voltage
lc= -4A; IB= -4mA
ICBO
Collector Cutoff Current
VCB=-120V;IE=0
ICED
Collector Cutoff Current
VCE=-100V;IB=0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hpE-1
DC Current Gain
lc=-1A; V0E=-5V
hpE-2
DC Current Gain
lc= -4A; VCE= -5V
fi
Current-Gain—Bandwidth Product lc=-0.5A;VCE=-10V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc= ~4A; IB1= -Is2= -4mA,
Vcc- -50V
hFE_2 Classifications
Q
S
P
5000-15000 7000-21000 8000-30000
2SB1502
MIN TYP. MAX UNIT
-100
V
-2.5
V
-3.0
V
-100 u A
-100 u A
-100 u A
2000
5000
30000
20
MHz
1.0
us
0.8
11 S
1.0
us
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