2SB753 View Datasheet(PDF) - Quanzhou Jinmei Electronic
Part Name
Description
Manufacturer
2SB753 Datasheet PDF : 4 Pages
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A
VBEsat Base-emitter saturation voltage
IC=-4A; IB=-0.4A
ICBO
IEBO
hFE-1
Collector cut-off current
Emitter cut-off current
DC current gain
VCB=-100V; IE=0
VEB=-5V; IC=0
IC=-1A ; VCE=-1V
hFE-2
DC current gain
IC=-4A ; VCE=-1V
COB
Output capacitance
IE=0 ; VCB=-10V; f=1MHz
fT
Transition frequency
IC=-1A ; VCE=-4V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IB1=- IB2=-0.3A ; VCC=-30V
RL=10Ω
hFE-1Classifications
O
Y
70-140
120-240
Product Specification
2SB753
MIN TYP. MAX UNIT
-80
V
-0.3 -0.5
V
-0.9 -1.4
V
-5
μA
-5
μA
70
240
30
250
pF
10
MHz
0.4
μs
2.5
μs
0.5
μs
2
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