2SB857(2005) View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
2SB857 Datasheet PDF : 4 Pages
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2SB857
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltages
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (IC Peak)
Total Power Dissipation
VCBO
-130
V
VCEO
-100
V
VEBO
-5
V
IC
-4
A
IC(PEAK)
-8
A
TO-126C
TO-252
PD
1.5
W
1.9
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BVCBO IC=-10µA, IE=0
Collector-Emitter Breakdown Voltage BVCEO IC=-50mA, IB=0
Emitter-Base Breakdown Voltage
BVEBO IE=-10µA, IC=0
Collector-Emitter Saturation Voltage *VCE(SAT) IC=-2A, IB=-0.2A
Base-Emitter Saturation Voltage
*VBE(ON) VCE=-4V, IC=-1A
Collector Cut-off Current
ICBO VCB=-130V, IC=0
DC Current Gain
*hFE1 VCE=-4V, IC=-0.1A
*hFE2 VCE=-4V, IC=-1A
Transition Frequency
fT VCE=-4V, IC=-500mA, f=100MHz
Note *Pulse Test: Pulse Width≦380µS, Duty Cycle≦2%.
MIN
-130
-100
-5
35
60
TYP
15
MAX
-1
-1
-1
UNIT
V
V
V
V
V
µA
320
MHz
CLASSIFICATION OF hFE2
CLASSIFICATION
RANGE
B
60 ~ 120
C
100 ~ 200
D
160 ~ 320
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R217-206,C
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