2SB857L-D-TN3-K View Datasheet(PDF) - Unisonic Technologies

Part Name

Description

Manufacturer

2SB857L-D-TN3-K

SILICON PNP TRANSISTOR

Unisonic Technologies 

2SB857

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATING (Ta=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltages

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Current (IC Peak)

VCBO

-130

V

VCEO

-100

V

VEBO

-5

V

IC

-4

A

IC(PEAK)

-8

A

TO-126C

10

W

Total Power Dissipation (TC=25°C)

TO-220

PD

TO-252

40

W

20

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-50~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25°C)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector-Base Breakdown Voltage

BVCBO IC=-10μA, IE=0

Collector-Emitter Breakdown Voltage BVCEO IC=-50mA, IB=0

Emitter-Base Breakdown Voltage

BVEBO IE=-10μA, IC=0

Collector-Emitter Saturation Voltage VCE(SAT) IC=-2A, IB=-0.2A (Note)

Base-Emitter Saturation Voltage

VBE(ON) VCE=-4V, IC=-1A (Note)

Collector Cut-off Current

ICBO VCB=-130V, IC=0

DC Current Gain

hFE1 VCE=-4V, IC=-0.1A (Note)

hFE2 VCE=-4V, IC=-1A (Note)

Transition Frequency

fT VCE=-4V, IC=-500mA, f=100MHz

Note: Pulse Test: Pulse Width≤380μS, Duty Cycle≤2%.

„ CLASSIFICATION OF hFE2

CLASSIFICATION

RANGE

B

60 ~ 120

C

100 ~ 200

MIN

-130

-100

-5

35

60

TYP MAX UNIT

V

V

V

-1

V

-1

V

-1

μA

320

15

MHz

D

160 ~ 320

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R217-006.E

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