2SD1691L-Y-TM3-T View Datasheet(PDF) - Unisonic Technologies

Part Name

Description

Manufacturer

2SD1691L-Y-TM3-T

NPN SILICON TRANSISTOR

Unisonic Technologies 

2SD1691

NPN SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

VCBO

60

V

VCEO

60

V

Emitter-Base Voltage

VEBO

7

V

Collector Current

DC

Pulse (PW≦10ms,Duty Cycle≦50%)

IC

ICP

5

8

A

Base Current

IB

1

A

TO-220F1

23

Collector Power Dissipation (Tc=25°C)

TO-220

TO-251/TO-252

PC

54

36

W

TO-126/ TO-126C

20

Junction Temperature

Storage Temperature Range

TJ

150

°C

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

CHARACTERISTIC

SYMBOL

TEST CONDITIONS

Collector Cut-off Current

ICBO

VCB=50V,IE=0

Emitter Cut-off Current

IEBO

VEB=7V, IC=0

hFE1

VCE=1V, IC =0.1A

DC Current Gain

hFE2

VCE=1V, IC =2A

Collector-Emitter Saturation Voltage

hFE3

VCE=2V, IC =5A

VCE(SAT) (Note) IC=2A, IB=0.2A

Base-Emitter Saturation Voltage

Turn On Time

Switching Time

Storage Time

Fall Time

VBE(SAT) (Note)

TON

TSTG

TF

IC=2A, IB=0.2A

20μsec

IB1

INPUT

IB1

Ω IB2

IB2

IB1=-IB2=0.2A

DUTY CYCLE≦1%

OUTPUT

5Ω

Vcc=10V

Note: Pulse test: PW≦50μS, Duty Cycle≦2% Pulse

 CLASSIFICATION OF hFE2

RANK

RANGE

O

160-320

MIN TYP MAX UNIT

10 μA

10 μA

60

160

400

50

0.1 0.3 V

0.9 1.2 V

0.2 1

1.1 2.5 μs

0.2 1

Y

200-400

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R204-015.E

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