DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

AMMC-5024-W50 View Datasheet(PDF) - Avago Technologies

Part Name
Description
Manufacturer
AMMC-5024-W50
AVAGO
Avago Technologies 
AMMC-5024-W50 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
AMMC-5024 DC Specifications/Physical Properties [1]
Symbol Parameters and Test Conditions
Units Min.
Idss
Vp
Vg2
Idsmin
(Vg1)
Idsmin
(Vg2)
θch-b
Saturated Drain Current (Vdd=7 V, Vg1=0 V, Vg2=open circuit)
mA 265
First Gate Pinch-off Voltage (Vdd=7 V, Idd=30 mA, Vg2=open circuit)
V
Second Gate Self-bias Voltage (Vdd=7 V, Idd = 200 mA, Vg2=open circuit) V
First Gate Minimum Drain Current
mA
(Vdd =7 V, Vg1=-7 V, Vg2=open circuit)
Second Gate Minimum Drain Current
(Vdd=7 V, Vg1=0 V, Vg2= -3.5 V)
Thermal Resistance[2] (Backside temperature, Tb = 25°C)
mA
°C/W
Typ.
Max.
350
385
-8.2
2.75
47
105
16.2
RF Specifications for High Power Applications [2, 3] (Vdd=7 V, Idd(Q)=200 mA, Zin= Zo=50Ω
Symbol Parameters and Test Conditions
Units Min.
|S21|2
|S21|2
Small-signal Gain
Small-signal Gain Flatness
dB
14
dB
RLin
Input Return Loss
dB
12
RLout
|S12|2
Output Return Loss
Isolation
dB
10
dB
26
P-1dB
Output Power @ 1 dB Gain Compression
f = 22 GHz
dBm 21
Psat
OIP3
Saturated Output Power
Output 3rd Order Intercept Point,
Rfin1 = Rfin2 = 2 dBm, f = 22 GHz, f = 2 MHz
f = 22 GHz
dBm 23
dBm 27
NF
Noise Figure (Vds = 3V, Ids = 140 mA)
f = 26 GHz
dB
f = 40 GHz
dB
Typ.
Max.
16
18
±0.75 ±2
16.9
16.8
28
22.5
24.5
30
4.6
6.5
7.2
9
RF Specifications for High Gain and Low Power Applications [2, 3] (Vdd=4 V, Idd(Q)=160 mA, Zin= Zo=50Ω)
Symbol Parameters and Test Conditions
Units Min.
|S21|2
Small-signal Gain
dB
|S21|2
Small-signal Gain Flatness
dB
RLin
Minimum Input Return Loss
dB
RLout
Minimum Output Return Loss
dB
|S12|2
Isolation
dB
P-1dB
Output Power @ 1 dB Gain Compression
f = 22 GHz
dBm
Psat
OIP3
Saturated Output Power
Output 3rd Order Intercept Point,
Rfin1 = Rfin2 = 2 dBm, f = 22 GHz, f = 2 MHz
f = 22 GHz
dBm
dBm
NF
Noise Figure
f = 26 GHz
dB
f = 40 GHz
dB
Notes:
1. Backside temperature Tb = 25°C unless otherwise noted.
2. Channel to board Thermal Resistance is measured using QFI method.
3. 100% on-wafer RF test is done at frequency = 2, 10, 20, 30 and 40 GHz, except as noted.
Typ.
Max.
17.5
±1.5
13
13
30
17.3
20.5
22.5
3.7
5.5


Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]