B772 View Datasheet(PDF) - Willas Electronic Corp.
Part Name
Description
Manufacturer
B772 Datasheet PDF : 2 Pages
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WILLAS
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M
B772 THRU
FM1200-M
Pb Free Prod
Features
• Batch process design, excellent power dissipation offers
O u t l i n e D r a w i n g better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for pac.k1in8g1c(o4de.6s0uf)fix "H"
Mechanical data
.173(4.39)
• Epoxy : UL94-V0 rated flame retardant
Package outline
S O T- 8 9 SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals,.0so6ld1eRraEbFle per MIL-STD-750
Method 2026
(1.55)REF
• Polarity : Indicated by cathode band
y • Mounting Position : Any
r • Weight : Approximated 0.011 gram
0.031(0.8) Typ.
.063(1.60)
.055(1.40)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
a MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
in Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.167(4.25)
RATINGS
.154M(a3rk.i9ng1C) ode
.102(2.60)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
.091(2.30)
12
13
14
15
16
18
10
115 120
lim Maximum Recurrent Peak Reverse Voltage
.02V3RR(M0.58)20
30
40
50
60
80
100
150
200
Maximum RMS Voltage
.01V6RM(S0.40)14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
e Maximum Average Forward Rectified Current
IO
1.0
.047(1.2)
r Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
30
super.im0p3os1e(d0on.8ra)ted load (JEDEC method)
P Typical Thermal Resistance (Note 2)
RΘJA
40
Typical Junction Capacitance (Note 1)
CJ
120
Operating Temperature Range .060TYP
Storage Temperature Range (1.50)TYP
TJ
TSTG
-55 to +125
.197(0.52)
.013(0.32)
-55 to +150
- 65 to +175
.017(0.44)
CHARACTERISTICS.118TYP SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-.M0H1F4M(1800.-M3H5F)M1100-MH FM1150-MH FM1200-
Maximum Forward Voltage at 1.0A DC (3.0)TYP VF
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
Dimensions in inches and (millimeters)
WILLAS ELERCeTvR.CONIC CO
WILLAS ELECTRONIC CORP.
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