BAS81 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BAS81 Datasheet PDF : 8 Pages
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Philips Semiconductors
Schottky barrier diodes
Product specification
BAS81; BAS82; BAS83
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
Cd
diode capacitance
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
CONDITIONS
see Fig.2
IF = 0.1 mA
IF = 1 mA
IF = 15 mA
VR = VRmax; see Fig.3
f = 1 MHz; VR = 2 V; see Fig.4
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Refer to SOD80 standard mounting conditions.
CONDITIONS
note 1
MAX. UNIT
330
mV
410
mV
1
V
200
nA
1.6
pF
VALUE
320
UNIT
K/W
1998 Jun 24
3
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