BAV99LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) (EACH DIODE)
Characteristic
Symbol Min
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 µA)
V(BR)
70
Reverse Voltage Leakage Current (VR = 70 Vdc)
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc, TJ = 150°C)
IR
—
—
—
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
—
Forward Voltage (IF = 1.0 mAdc)
VF
—
(IF = 10 mAdc)
—
(IF = 50 mAdc)
—
(IF = 150 mAdc)
—
W Reverse Recovery Time (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100
trr
—
Forward Recovery Voltage (IF = 10 mA, tr = 20 ns)
VFR
—
Max
Unit
—
2.5
30
50
1.5
715
855
1000
1250
6.0
1.75
Vdc
mAdc
pF
mVdc
ns
V
820 Ω
+10 V
2k
100 µH IF
0.1 µF
0.1 µF
tr
tp
t
IF
10%
trr
t
50 Ω OUTPUT
PULSE
GENERATOR
DUT
50 Ω INPUT
90%
SAMPLING
OSCILLOSCOPE
VR
INPUT SIGNAL
iR(REC) = 1 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data