BC858B View Datasheet(PDF) - Zetex => Diodes

Part Name

Description

Manufacturer

BC858B

SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS

Zetex => Diodes 

BC856

BC858

BC860

BC857

BC859

ELECTRICAL CHARACTERISTICS (Continued)

PARAMETER

Noise Figure

SYMBOL

N

Typ

Max

BC856

2

10

BC857 BC858 BC859 BC860

2211

10 10 4 4

UNIT CONDITIONS.

dB VCB = -5V,

dB IC=-200µA, RG=2kΩ,

f=1kHz, ∆f=200Hz

Typ

–

–

– 1.2 1 dB VCB = -5V,

Max –

–

–

4

3 dB IC=-200µA, RG=2kΩ,

f=30Hz to 15kHz at

-3dB points

Equivalent Noise

Voltage

en

Max –

–

– 110 110 nV VCB = -5V,

IC=-200µA, RG=2kΩ,

f=10Hz to 50Hz at

-3dB points

Dynamic Group VI hie

Characteristics

Group A

Min 0.4 0.4 0.4 –

Typ 1.2 1.2 1.2 –

Max 2.2 2.2 2.2 –

Min

1.6

Typ

2.7

Max

4.5

– kΩ

– kΩ

– kΩ

kΩ

kΩ

kΩ

Group B

Group C

Group VI hre

Group A

Group B

Group C

Min

Typ

Max

3.2

kΩ

4.5

kΩ

8.5

kΩ

Min –

Typ –

Max –

– 6 6 6 kΩ

– 8.7 8.7 8.7 kΩ

– 15 15 15 kΩ

Typ 2.5 2.5 2.5 –

– x10-4

Typ 1.5 1.5 1.5 1.5 1.5 x10-4

Typ

2

2

2

2

2 x10-4

Typ

3

3

3 x10-4

Group VI hfe

Min 75 75 75 –

–

Typ 110 110 110 – –

Max 150 150 150 – –

Group A

Min

125

Typ

220

Max

260

VCE=-5V

Ic=-2mA

f=1kHz

Group B

Min

Typ

240

330

Max

500

Group C

Min – 450 450 450 450

Typ – 600 600 600 600

Max – 900 900 900 900

Group VI hoe Typ 20 20 20 –

Max 40 40 40 –

– µs

– µs

Group A

Typ

Max

18

µs

30

µs

Group B

Typ

Max

30

µs

60

µs

Group C

Typ –

Max –

– 60 60 60 µs

– 110 110 110 µs

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