BCW61 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

BCW61

PNP Silicon AF Transistors

Siemens AG 

BCW 61

BCX 71

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC characteristics

Collector-emitter breakdown voltage

V(BR)CE0

V

IC = 10 mA

BCW 61, BCW 61 FF

32

–

–

BCX 71

45

–

–

Collector-base breakdown voltage

V(BR)CB0

IC = 10 µA

BCW 61, BCW 61 FF

32

–

–

BCX 71

45

–

–

Emitter-base breakdown voltage

IE = 1 µA

V(BR)EB0 5

–

–

Collector cutoff current

ICB0

VCB = 32 V

BCW 61, BCW 61 FF

–

–

20 nA

VCB = 45 V

BCX 71

–

–

20 nA

VCB = 32 V, TA = 150 ˚C BCW 61, BCW 61 FF

–

–

20

µA

VCB = 45 V, TA = 150 ˚C BCX 71

–

–

20

µA

Emitter cutoff current

VEB = 4 V

IEB0

–

–

20 nA

DC current gain 1)

hFE

IC = 10 µA, VCE = 5 V

BCW 61 A, BCX 71 G

BCW 61 B, BCX 71 H

BCW 61 FF, BCW 61 C, BCX 71 J

BCW 61 FN, BCW 61 D, BCX 71 K

IC = 2 mA, VCE = 5 V

BCW 61 A, BCX 71 G

BCW 61 B, BCX 71 H

BCW 61 FF, BCW 61 C, BCX 71 J

BCW 61 FN, BCW 61 D, BCX 71 K

IC = 50 mA, VCE = 1 V

BCW 61 A, BCX 71 G

BCW 61 B, BCX 71 H

BCW 61 FF, BCW 61 C, BCX 71 J

BCW 61 FN, BCW 61 D, BCX 71 K

–

20

140 –

30

200 –

40

300 –

100 460 –

120 170 220

180 250 310

250 350 460

380 500 630

60

–

–

80

–

–

100 –

–

110 –

–

1) Pulse test: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group

3

Share Link: