BCW61FN View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

BCW61FN

PNP Silicon AF Transistors

Siemens AG 

BCW 61

BCX 71

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC characteristics

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.25 mA

IC = 50 mA, IB = 1.25 mA

Base-emitter saturation voltage1)

IC = 10 mA, IB = 0.25 mA

IC = 50 mA, IB = 1.25 mA

Base-emitter voltage 1)

IC = 10 µA, VCE = 5 V

IC = 2 mA, VCE = 5 V

IC = 50 mA, VCE = 1 V

VCEsat

VBEsat

VBE (on)

V

–

0.12 0.25

–

0.20 0.55

–

0.70 0.85

–

0.83 1.05

–

0.52 –

0.55 0.65 0.75

–

0.78 –

AC characteristics

Transition frequency

IC = 20 mA, VCE = 5 V, f = 100 MHz

fT

–

Output capacitance

VCB = 10 V, f = 1 MHz

Cobo

–

Input capacitance

VCB = 0.5 V, f = 1 MHz

Cibo

–

Short-circuit input impedance

h11e

IC = 2 mA, VCE = 5 V, f = 1 kHz

BCW 61 A, BCX 71 G

–

BCW 61 B, BCX 71 H

–

BCW 61 FF, BCW 61 C, BCX 71 J

–

BCW 61 FN, BCW 61 D, BCX 71 K

–

Open-circuit reverse voltage transfer ratio

h12e

IC = 2 mA, VCE = 5 V, f = 1 kHz

BCW 61 A, BCX 71 G

–

BCW 61 B, BCX 71 H

–

BCW 61 FF, BCW 61 C, BCX 71 J

–

BCW 61 FN, BCW 61 D, BCX 71 K

250 –

3

–

8

–

2.7 –

3.6 –

4.5 –

7.5 –

1.5 –

2.0 –

2.0 –

3.0

MHz

pF

kΩ

10– 4

1) Pulse test: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group

4

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