BCX51 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

BCX51

PNP Silicon AF Transistors

Siemens AG 

BCX 51 ... BCX 53

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 10 mA

BCX 51

BCX 52

BCX 53

Collector-base breakdown voltage

IC = 100 µA

BCX 51

BCX 52

BCX 53

Emitter-base breakdown voltage

IE = 10 µA

Collector cutoff current

VCB = 30 V

VCB = 30 V, TA = 150 ˚C

Emitter cutoff current

VEB = 4 V

DC current gain1)

IC = 5 mA, VCE = 2 V

IC = 150 mA, VCE = 2 V

BCX 51, BCX 52, BCX 53

BCX 51-10, BCX 52-10, BCX 53-10

BCX 51-16, BCX 52-16, BCX 53-16

IC = 500 mA, VCE = 2 V

Collector-emitter saturation voltage1)

IC = 500 mA, IB = 50 mA

Base-emitter voltage1)

IC = 500 mA, VCE = 2 V

AC characteristics

Transition frequency

IC = 50 mA, VCE = 10 V, f = 20 MHz

Symbol

Values

Unit

min. typ. max.

V(BR)CE0

V

45

–

–

60

–

–

80

–

–

V(BR)CB0

45

–

–

60

–

–

100 –

–

V(BR)EB0 5

–

–

ICB0

–

–

100 nA

–

–

20

µA

IEB0

–

–

20 nA

hFE

VCEsat

–

25

–

–

40

–

250

63

100 160

100 160 250

25

–

–

–

–

0.5 V

VBE

–

–

1

fT

–

125 –

MHz

1) Pulse test: t ≤ 300 µs, D = 2 %.

Semiconductor Group

3

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