BD330 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

BD330

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

BD330

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0

-20

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB=B -0.2A

VBE(on)-1 Base-Emitter On Voltage

IC= -5mA; VCE= -10V

VBE(on)-2 Base-Emitter On Voltage

ICBO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC= -2A; VCE= -1V

VCB= -32V; IE= 0

VCB= -32V; IE= 0,TC=150℃

VEB= -5V; IC= 0

-0.5 V

-0.6

V

-1.2 V

-0.1

-10

μA

-0.1 μA

hFE-1

DC Current Gain

IC= -5mA; VCE= -10V

50

hFE-2

DC Current Gain

IC= -0.5A; VCE= -1V

85

375

hFE-3

DC Current Gain

IC= -2A; VCE= -1V

40

fT

Current-Gain—Bandwidth Product IC= -50mA;VCE= -5V; ftest= 100MHz

100

MHz

isc Website：www.iscsemi.cn

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