BDX33, 34
Darlington Transistors
Features:
• Collector-Emitter sustaining voltage-
VCEO(sus) = 80V (Minimum) - BDX33B, BDX34B
= 100V (Minimum) - BDX33C, BDX34C
• Monolithic construction with Built-in Base-Emitter shunt resistor.
Pin 1. Base
2. Collector
3. Emitter
4. Collector(Case)
Dimensions Minimum Maximum
A
14.68
15.31
B
9.78
10.42
C
5.01
6.52
D
13.06
14.62
E
3.57
4.07
F
2.42
3.66
G
1.12
1.36
H
0.72
0.96
I
4.22
4.98
J
1.14
1.38
K
2.20
2.97
L
0.33
0.55
M
2.48
2.98
O
3.70
3.90
Dimensions : Millimetres
NPN
BDX33B
BDX33C
PNP
BDX34B
BDX34C
10 Ampere
Complementary Silicon
Power Transistors
80 - 100 Volts
70 Watts
TO-220
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31/05/05 V1.0