BSP50 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BSP50 Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
NPN Darlington transistors
Product specification
BSP50; BSP51; BSP52
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
note 1
thermal resistance from junction to solder point
96
K/W
17
K/W
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook“.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICES
IEBO
hFE
VCEsat
VBEsat
collector cut-off current
BSP50
BSP51
BSP52
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation
voltage
VBE = 0; VCE = 45 V
VBE = 0; VCE = 60 V
VBE = 0; VCE = 80 V
IC = 0; VEB = 4 V
VCE = 10 V; note 1; see Fig.2
IC = 150 mA
IC = 500 mA
IC = 500 mA; IB = 0.5 mA
IC = 500 mA; IB = 0.5 mA;
Tj = 150 °C
IC = 500 mA; IB = 0.5 mA
−
−
50
−
−
50
−
−
50
−
−
50
1000 −
−
2000 −
−
−
−
1.3
−
−
1.3
−
−
1.9
fT
transition frequency
IC = 500 mA; VCE = 5 V; f = 100 MHz −
200 −
Switching times (between 10% and 90% levels); see Fig.3
ton
turn-on time
toff
turn-off time
ICon = 500 mA; IBon = 0.5 mA;
IBoff = −0.5 mA
−
500 −
−
1300 −
nA
nA
nA
nA
V
V
V
MHz
ns
ns
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Apr 23
3
Share Link: 