BUV50 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

Manufacturer

BUV50

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; L=25mH

V(BR)EBO Emitter-base breakdown voltage

IE=50mA; IC=0

VCEsat-1

VCEsat-2

VCEsat-3

VBEsat-1

VBEsat-2

ICBO

Collector-emitter saturation voltage

IC=10A; IB=0.5A

TC=100

Collector-emitter saturation voltage

IC=20A; IB=2A

TC=100

Collector-emitter saturation voltage

IC=24A; IB=3A

TC=100

Base-emitter saturation voltage

IC=20A; IB=2A

TC=100

Base-emitter saturation voltage

IC=24A; IB=3A

TC=100

Collector cut-off current

VCB=VCBO(BR); IE=0

TC=100

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=5A ; VCE=4V

Product Specification

BUV50

MIN TYP. MAX UNIT

125

V

7

V

0.8

0.9

V

0.9

1.5

V

1.2

1.8

V

1.6

1.7

V

1.7

1.9

V

1

5

mA

1

mA

30

2

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