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GI1103 View Datasheet(PDF) - General Semiconductor

Part Name
Description
Manufacturer
GI1103
GE
General Semiconductor 
GI1103 Datasheet PDF : 2 Pages
1 2
RATINGS AND CHARACTERISTIC CURVES GI1101 THRU GI1104
FIG. 1 - MAXIMUM FORWARD CURRENT
DERATING CURVE
3.5
RESISTIVE OR INDUCTIVE LOAD
3.0
GI1101 - GI1103
2.5
0.8 x 0.8 x 0.04" THK
(20 x 20 x 1.0mm)
COPPER HEATSINKS
2.0
GI1104
1.5
TL
L
1.0
0.5
0.375" (9.5mm) LEAD LENGTH
0
0 25 50 75 100 125 150 175
LEAD TEMPERATURE, °C
60
50
40
30
20
10
0
1
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method) at RATED TL
10
100
NUMBER OF CYCLES AT 60 HZ
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
1,000
FIG. 4 - TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
10
TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE
1
0.1
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
100
10
1
TJ=125°C
TJ=100°C
0.1
TJ=25°C
0.01
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
90
TJ=25°C
f=1.0 MHZ
75
Vsig=50mVp-p
60
45
30
15
0
0.1
1
10
100
REVERSE VOLTAGE, VOLTS

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