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ILD1615-4 View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
Manufacturer
ILD1615-4 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
ILD1615/ ILQ1615
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltage
Forward current
Surge current
Power dissipation
Derate linearly from 25 °C
Test condition
Symbol
VR
IF
IFSM
Pdiss
Value
6.0
60
1.5
100
1.0
Unit
V
mA
A
mW
mW/°C
Output
Parameter
Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Collector current
Power dissipation
Derate linearly from 25 °C
Test condition
t < 1.0 ms
Symbol
BVCEO
BVECO
IC
IC
Pdiss
Value
70
7.0
50
100
150
1.5
Unit
V
V
mA
mA
mW
mW/°C
Coupler
Parameter
Storage temperature
Operating temperature
Soldering temperature
Package power dissipation,
ILD1615
Derate linearly from 25 °C
Package power dissipation,
ILQ1615
Derate linearly from 25 °C
Isolation test voltage
Creepage
Clearance
Isolation resistance
Test condition
2.0 mm distance from case
bottom
t = 1.0 sec.
VIO = 500 V, Tamb = 25 °C
VIO = 500 V, Tamb = 100 °C
Symbol
Tstg
Tamb
Tsld
VISO
RIO
RIO
Value
- 55 to + 150
- 55 to + 110
260
400
5.33
500
6.67
5300
≥ 7.0
≥ 7.0
≥ 1012
≥ 1011
Unit
°C
°C
°C
mW
mW/°C
mW
mW/°C
VRMS
mm
mm
Ω
Ω
www.vishay.com
2
Document Number 82582
Rev. 1.5, 23-Mar-06

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