IPS04N03LAG View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
IPS04N03LAG Datasheet PDF : 12 Pages
| |||
Type
OptiMOS®2 Power-Transistor
Package
Marking
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
IPD04N03LA G IPF04N03LA G
IPS04N03LA G IPU04N03LA G
Product Summary
V DS
R DS(on),max (SMD version)
ID
25 V
3.8 mΩ
50 A
Type
IPD04N03LA
IPF04N03LA
IPS04N03LA
IPU04N03LA
Package
Marking
P-TO252-3-11
04N03LA
P-TO252-3-23
04N03LA
P-TO251-3-11
04N03LA
P-TO251-3-1
04N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C2)
Pulsed drain current
I D,pulse
T C=100 °C
T C=25 °C3)
Avalanche energy, single pulse
E AS
I D=45 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
50
50
350
600
6
±20
115
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.97
page 1
2006-05-17
Share Link: 