SIHF820-E3(2011) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SIHF820-E3 Datasheet PDF : 9 Pages
| |||
IRF820, SiHF820
Vishay Siliconix
800
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
600
Coss = Cds + Cgd
Ciss
400
Coss
200
0
100
91059_05
Crss
101
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
100 150 °C
25 °C
0.4
91059_07
VGS = 0 V
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 ID = 2.1 A
16
VDS = 400 V
VDS = 250 V
12
VDS = 100 V
8
4
0
0
91059_06
For test circuit
see figure 13
4
8
12
16
20
24
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
102
5
2
10
5
2
1
5
2
0.1
5
2
10-2
0.1 2
Operation in this area limited
by RDS(on)
10 µs
100 µs
1 ms
10 ms
51 2
TC = 25 °C
TJ = 150 °C
Single Pulse
5 10 2 5 102 2
5 103 2
5 104
91059_08
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91059
S11-0507-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Share Link: 