IRF9540N View Datasheet(PDF) - Unspecified

Part Name

Description

Manufacturer

IRF9540N

HEXFET® Power MOSFET

Unspecified 

IRF9540N

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)DSS

∆V(BR)DSS/∆TJ

RDS(on)

VGS(th)

gfs

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

LD

Internal Drain Inductance

LS

Internal Source Inductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Min. Typ. Max. Units

-100 ––– ––– V

––– -0.11 ––– V/°C

––– ––– 0.117 Ω

-2.0 ––– -4.0 V

5.3 ––– ––– S

––– ––– -25 µA

––– ––– -250

––– ––– 100

nA

––– ––– -100

––– ––– 97

––– ––– 15 nC

––– ––– 51

––– 15 –––

––– 67 –––

ns

––– 51 –––

––– 51 –––

––– 4.5 –––

nH

––– 7.5 –––

––– 1300 –––

––– 400 ––– pF

––– 240 –––

Conditions

VGS = 0V, ID = -250µA

Reference to 25°C, ID = -1mA

VGS = -10V, ID = -11A „

VDS = VGS, ID = -250µA

VDS = -50V, ID = -11A

VDS = -100V, VGS = 0V

VDS = -80V, VGS = 0V, TJ = 150°C

VGS = 20V

VGS = -20V

ID = -11A

VDS = -80V

VGS = -10V, See Fig. 6 and 13 „

VDD = -50V

ID = -11A

RG = 5.1Ω

RD = 4.2Ω, See Fig. 10 „

Between lead,

D

6mm (0.25in.)

from package

G

and center of die contact

S

VGS = 0V

VDS = -25V

ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

––– ––– -23

MOSFET symbol

A showing the

D

integral reverse

G

––– ––– -76

p-n junction diode.

S

––– ––– -1.6 V TJ = 25°C, IS = -11A, VGS = 0V „

––– 150 220 ns TJ = 25°C, IF = -11A

––– 830 1200 nC di/dt = -100A/µs „

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ Starting TJ = 25°C, L = 7.1mH

RG = 25Ω, IAS = -11A. (See Figure 12)

ƒ ISD ≤ -11A, di/dt ≤ -470A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

2/8

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