IRFL9014PBF View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRFL9014PBF

HEXFET® Power MOSFET

International Rectifier 

IRFL9014PbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

V(BR)DSS Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(on)

VGS(th)

gfs

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

LD

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Drain Inductance

LS

Ciss

Coss

Crss

Internal Source Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min. Typ. Max. Units

Conditions

-60 ––– ––– V VGS = 0V, ID = 250µA

––– -0.059 ––– V/°C Reference to 25°C, ID = 1mA

––– ––– 0.50 Ω VGS = -10V, ID = 1.1A „

-2.0 ––– -4.0 V VDS = VGS, ID = 250µA

1.3 ––– ––– S VDS = -25V, ID = 1.1A „

––– ––– -100 µA VDS = -60V, VGS = 0V

––– ––– -500

VDS = -48V, VGS = 0V, TJ = 125°C

––– ––– -100 nA VGS = -20V

––– ––– 100

VGS = 20V

––– ––– 12

ID =-6.7A

––– ––– 3.8

––– ––– 5.1

nC VDS =-48V

VGS = -10V, See Fig. 6 and 13 „

––– 11 –––

VDD = -30V

––– 63 –––

––– 9.6 –––

ns ID = -6.7A

RG = 24 Ω

––– 31 –––

RD = 4.0 Ω, See Fig. 10 „

––– 4.0 –––

Between lead, 6mm(0.25in)

D

nH from package and center

G

––– 6.0 –––

of die contact.

S

––– 270 –––

––– 170 –––

VGS = 0V

pF VDS = 25V

––– 31 –––

ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

IS

ISM

VSD

trr

Qrr

ton

Notes:

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode) 

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

––– ––– -1.8

––– ––– -14

MOSFET symbol

showing the

A integral reverse

p-n junction diode.

D

G

S

––– ––– -5.5 V TJ = 25°C, IS = -1.8A, VGS = 0V „

––– 80 160 ns TJ = 25°C, IF =-6.7A

––– 0.096 0.19 µC di/dt = 100A/µs „

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ VDD=-25V, starting TJ = 25°C, L =50 mH

RG = 25Ω, IAS = -1.8A. (See Figure 12)

2

ƒ ISD ≤ -6.7A, di/dt ≤90A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

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